Black SiC powder 800# for semiconductor equipment – porous silicon carbide ceramic
In semiconductor production equipment, high-performance ceramic components are essential. Especially silicon carbide ceramics are important components in key equipment such as etching machines, lithography machines, ion implantation machines, etc. For example, grinding and polishing suction cups, photolithography suction cups, inspection suction cups, etching processes, and motion platforms all have the presence of silicon carbide ceramics. These silicon carbide ceramic components have good structural stability, thermal stability, wear resistance, corrosion resistance, and high dimensional accuracy. Silicon carbide powder, as the main raw material for producing silicon carbide ceramics, must also have good and stable properties. Among them, black SiC powder 800# for porous silicon carbide ceramic suction cups is a typical application.
With the refined production of SiC powder, the physical and chemical properties and particle size stability have made significant progress. Fine black SiC powder refined from screening, acid alkali washing, and water washing, is more suitable for the requirements of high-tech fields such as semiconductors. The specific characteristics are as follows:
1. High temperature stability.
Black SiC powder has a very high melting point and thermal stability, allowing porous ceramics to maintain good performance in high temperature environments.
2. High purity.
After chemical treatment and water washing, black silicon carbide powder has low magnetic content, low free carbon content, and good fluidity and easy dispersion.
3. High particle size concentration.
High consistency in particle size, narrow range of powder particles, and high packing density. It can improve the density of silicon carbide ceramics.
4. Excellent mechanical properties.
Black SiC has high hardness, strength, and excellent compression resistance. It can enhance the mechanical strength and wear resistance of porous ceramics.
5. Strong chemical stability.
Black silicon carbide has good corrosion resistance to acids, bases, and most chemical substances. That can improve the chemical stability and corrosion resistance of porous ceramics.
6. Good thermal conductivity.
Due to the high thermal conductivity of black silicon carbide, porous ceramics can more effectively transfer and disperse heat.
7. Low coefficient of thermal expansion.
Black silicon carbide has a lower coefficient of thermal expansion. It helps reduce the thermal stress and damage of porous ceramics under temperature changes.
8. Enhanced oxidation resistance.
Black SiC can improve the oxidation resistance of porous ceramics and extend their service life.
In summary, using black silicon carbide as an additive or base material for porous ceramics can significantly improve its high-temperature stability, mechanical properties, chemical stability, and various other properties. Those advantages make it more widely applicable in high temperature, high pressure, and highly corrosive environments, especially in the semiconductor equipment industry.
