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5N SiC powder Cubic beta silicon carbide 100nm 300nm 500nm

High-purity beta silicon carbide is β-phase silicon carbide with a purity of 5N or higher. β-phase cubic silicon carbide has a 3C cubic crystal structure, and its unique crystal morphology gives it a hardness approaching that of diamond, with a Mohs hardness of 9.5-9.75. High-purity β-silicon carbide powder is produced using high-temperature thermosetting and chemical vapor deposition (CVD) methods. The product features high purity, high beta phase content, controllable particle size, excellent sintering activity, and good dispersibility. Simultaneously, cubic silicon carbide possesses excellent physicochemical properties, such as high thermal conductivity, high electron drift velocity, high electron mobility, corrosion resistance, and good thermal shock resistance. It is widely used in aerospace, high-end ceramics, new energy batteries, surface treatment, and semiconductor industries.

$74,900.00$100,000.00 / MT

5N SiC powder Cubic beta silicon carbide 100nm 300nm 500nm

High-purity beta silicon carbide is β-phase silicon carbide with a purity of 5N or higher. β-phase cubic silicon carbide has a 3C cubic crystal structure, and its unique crystal morphology gives it a hardness approaching that of diamond, with a Mohs hardness of 9.5-9.75. High-purity β-silicon carbide powder is produced using high-temperature thermosetting and chemical vapor deposition (CVD) methods. The product features high purity, high beta phase content, controllable particle size, excellent sintering activity, and good dispersibility. Simultaneously, cubic silicon carbide possesses excellent physicochemical properties, such as high thermal conductivity, high electron drift velocity, high electron mobility, corrosion resistance, and good thermal shock resistance. It is widely used in aerospace, high-end ceramics, new energy batteries, surface treatment, and semiconductor industries.

Performance characteristics of 5N SiC powder Cubic beta silicon carbide:

  1. High purity, with a product purity reaching 5N or higher.
  2. Cubic phase content up to 99%, pure β-phase crystal form.
  3. Morphology: Spherical particles with a wide range of selectable particle sizes.
  4. Low oxygen content, less than 0.3%.
  5. Good sintering activity and easy dispersion.
  6. Excellent high-temperature resistance, wear resistance, corrosion resistance, and thermal shock resistance.

Physical index

crystal structureCubic
Crystal phaseβ
β content≥99%
Melting point2700°
Decomposition temperature2830°±40°
Thermal expansion coefficient2.5-7 x10-6 /°C
Thermal conductivity0.255 W/cm K
Mohs hardness9.5-9.75
Vickers hardness (microhardness)3300-3500kg/mm2
Specific Gravity3.216g/cm3

 

Spec.

Spec.SizeSiC purity(%)β percentageShape
5N-βSiC-100nm100nm5N≥99%sub-spherical
5N-βSiC-300nm300nm5N≥99%sub-spherical
5N-βSiC-500nm500nm5N≥99%sub-spherical
5N-βSiC-2um2um5N≥99%sub-spherical
5N-βSiC-5um5um5N≥99%sub-spherical
5N-βSiC-10um10um5N≥99%sub-spherical
5N-βSiC-10um50um5N≥99%sub-spherical
7N-βSiC-G1-10mm7N≥99%Particle

 

Application

  1. Fine grinding
  2. Precision silicon carbide ceramics
  3. New energy batteries
  4. Semiconductors
  5. Specialty coatings
  6. High-temperature materials
  7. Electronic components

 

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