Green Silicon Carbide powder for Photoelectric wafer polishing
Green silicon carbide powder 2500#, 3000#, 4000#, and 6000# are the main grinding media for photoelectric wafer grinding. In the semiconductor industry, green silicon carbide powder 2000 to 2500 meshes was once used as the mainstream material for wire cutting of silicon wafers. With the development of wire-cutting technology and the mass production of synthetic diamond powder, diamond powder gradually replaces green silicon carbide powder. However, in the photoelectric industry, green silicon carbide powder still plays an important role in the grinding field.
Photoelectric crystal is an important component of a phototransistor, which converts light energy into electrical energy to achieve current conversion and output. It is also possible to detect optical pulses and convert them into digital pad signals. Photoelectric wafters are usually synthetic crystal materials with photoelectric properties, and the main materials include Lithium Niobate crystals (LiNbO3), Lithium Tantalate crystals (LiTaO3), Silicon Dioxide crystals (SiO2), Titanium Dioxide crystals (TiO2), Tellurium Oxide crystals (TeO2), Titanium Barium Titanate crystals (BaTiO3), and Barium Metaborate BBO crystals (β- BaB2O4) and so on.
The processing and grinding of photoelectric crystals are key processes in the production of photoelectric components. Reasonable crystal surface roughness will affect the performance of components. The hardness of the photoelectric crystals mentioned above is 7-7.5 (Mohs hardness) or 4-6 (Mohs hardness), and green silicon carbide can achieve efficient grinding for these crystals. Green silicon carbide has a Vickers hardness of 3280-3400 kg/mm2 or a microhardness of 33Gpa. It is stable under high temperatures and most chemical environments and is a mainstream abrasive material for photoelectric crystal grinding.
However, not all green silicon carbide powder in the market can meet the requirements of photoelectric crystal grinding. This is because of the uniformity and shape of the ultrafine particles. First, the particle span of green silicon carbide powder is large. Coarse particles of grinding powder will scratch the crystal surface and cause scratches. Fine particles of grinding powder will lead to reduced grinding efficiency. Secondly, the particle morphology of green silicon carbide powder. Sharp corners and needle-shaped grinding powder particles are not conducive to grinding a smooth surface. On the other hand, relatively rounded particles are beneficial for grinding.
In response to these two situations, green silicon carbide powder manufacturers can control their processes by improving them. Firstly, overflow-graded green silicon carbide grinding powder can reduce the proportion of fine powder to coarse particles. It can also control the particle size span of the grinding powder into a narrow range. This ensures the consistency of the particles. Secondly, using reasonable physical processing methods can change the particle shape of the grinding powder. From the early grinding process to the particle shaping of the rear track, strict control has been implemented, greatly reducing the proportion of sharp, columnar, and needle-shaped particles.
