GC powder for polishing and lapping sapphire wafer
In the field of sapphire wafer polishing, the commonly used grinding material is boron carbide. However, the price of boron carbide is high, and for situations that require rapid removal, GC powder (Green silicon carbide powder) can also achieve the desired grinding effect.
GC powder has the following advantages:
1. High hardness and wear resistance.
Green SiC is a material with extremely high hardness. Although it cannot compare to superhard materials such as diamond and cubic boron nitride, it is completely comparable to boron carbide. This high hardness enables it to effectively cut sapphire crystals during the grinding process, reducing wear and improving grinding efficiency.
2. Good chemical stability.
GC polising powder has excellent chemical stability during the grinding process, and is not easily reacted with sapphire crystals or other grinding media, ensuring the stability of the grinding process and the quality of the final product.
3. High thermal conductivity.
GC abrasive powder has a high thermal conductivity, which means that the heat generated during the grinding process can be quickly dissipated, thereby reducing the damage of thermal stress to sapphire crystals and maintaining the integrity and optical properties of the crystal.
4. Uniform particle size.
GC abraive powder undergoes fine processing to achieve uniform particle size distribution, which helps to achieve more uniform and precise grinding effects, ensuring the smoothness and consistency of the sapphire crystal surface.
5. Cost effectiveness.
The price of GC powder is lower than that of boron carbide, which can control the cost of rough polishing process and improve efficiency.
