Green silicon carbide wire sawing VS. Diamond wire sawing
Green silicon carbide powder is a common wire-sawing material in the photovoltaic industry. In recent years, the photovoltaic industry has significantly shrunk, and wire sawing is mainly used for slicing silicon wafers in the semiconductor industry. Diamond wire made from SiC powder combined with steel wire and diamond powder has become the two main tools for chip sawing. The differences between the two wire sawing methods are:
1. Wire sawing of green silicon carbide powder is the rolling grinding of abrasive particles on crystal ingots. Diamond wire cutting is a direct sawing process where abrasive particles are fixed on a metal wire.
2. When cutting silicon carbide wire, the speed of abrasive grinding is half of the speed of the steel wire. When slicing with diamond wire, the abrasive cutting speed is synchronized with the steel wire.
3. Green silicon carbide slurry causes less damage to the surface of the chip. The surface roughness of diamond wire cutting is lower than that of silicon carbide slurry cutting.
4. The cost of Silicon carbide wire sawing is higher than that of diamond rope.
5. The removal rate of ingots by diamond is several times higher than that of silicon carbide wire cutting.
6. The sawing slurry of green silicon carbide and ethylene glycol is not as clean as the diamond wire environment.
Overall, green silicon carbide micro powder wire sawing and diamond wire cutting have advantages and disadvantages respectively. Although diamond wire cutting has become the mainstream method of wire cutting at present. Green SiC micro powder also has rationality for work with high surface roughness requirements. Green silicon carbide powders 1500 mesh and 2000 mesh have uniform particles, high cleanliness, and strong cutting force, making them commonly used particle sizes for silicon carbide wire cutting.
